Nonlinear dielectric relaxation and memory effects in oxide materials
DOI:
https://doi.org/10.54355/tbusphys/4.1.2026.0049Keywords:
nonlinear dielectric relaxation, memory effects, oxide materials, frequency-dependent permittivity, polarization dynamicsAbstract
Nonlinear dielectric relaxation and memory effects in oxide materials play a crucial role in the performance of modern electronic and energy-related devices. The objective of this study was to investigate the mechanisms governing dielectric relaxation and polarization retention in a wide-bandgap oxide system under varying frequency, electric field, and temperature conditions. Polycrystalline oxide samples were synthesized using a solid-state method and characterized using dielectric spectroscopy and polarization measurements. Frequency-dependent permittivity, electric-field-induced nonlinear response, hysteresis behavior, and time-dependent polarization decay were systematically analyzed. The results revealed a strong frequency dependence of dielectric properties, with permittivity decreasing from approximately 1200 at low frequencies to about 450 at high frequencies, accompanied by a broad relaxation peak. The application of electric fields led to a nonlinear decrease in permittivity, indicating polarization saturation effects. Polarization measurements showed distinct hysteresis loops with remnant polarization around 0.12 C/m², confirming the presence of memory effects. Time-dependent analysis demonstrated non-exponential relaxation with partial retention of polarization over extended time scales. Additionally, temperature-dependent measurements indicated thermally activated relaxation processes, as evidenced by an increase in permittivity and a shift of relaxation behavior toward higher frequencies. These findings demonstrate that dielectric response in oxide materials is governed by multiple interacting mechanisms, including dipolar relaxation, interfacial polarization, and charge trapping. The study provides a comprehensive understanding of nonlinear dielectric relaxation and memory effects, which is important for the development of advanced dielectric and energy storage materials.
Downloads
References
V. Koval, G. Viola, M. Zhang, M. Faberova, R. Bures, and H. Yan, “Dielectric relaxation and conductivity phenomena in ferroelectric ceramics at high temperatures,” J. Eur. Ceram. Soc., vol. 44, no. 5, pp. 2886–2902, May 2024, doi: 10.1016/j.jeurceramsoc.2023.12.015.
W. H. H. Woodward, “Broadband Dielectric Spectroscopy - A Practical Guide,” ACS Symp. Ser., vol. 1375, pp. 3–59, 2021, doi: 10.1021/bk-2021-1375.ch001.
R. Xue et al., “Microstructural, dielectric, and nonlinear properties of Ca1–xCdxCu3Ti4O12 thin films,” Ceram. Int., vol. 49, no. 1, pp. 134–144, Jan. 2023, doi: 10.1016/j.ceramint.2022.08.321.
A. Kılçık, N. Berk, H. Seymen, and Ş. Karataş, “Frequency and voltage dependent of electrical and dielectric properties of 14 nm Fully Depleted Silicon-On-Insulator (FD-SOI),” Phys. B Condens. Matter, vol. 704, no. 6, p. 417061, May 2025, doi: 10.1007/s10854-021-05515-3.
J. Deng et al., “Dielectric Relaxation and Magnetic Structure of A-Site-Ordered Perovskite Oxide Semiconductor CaCu3Fe2Ta2O12,” Inorg. Chem., vol. 60, no. 10, pp. 6999–7007, May 2021, doi: 10.1021/acs.inorgchem.0c03229.
J. A. Felix, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and E. P. Gusev, “Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics,” Microelectron. Reliab., vol. 44, no. 4, pp. 563–575, Apr. 2004, doi: 10.1016/j.microrel.2003.12.005.
Y. Yang et al., “Interfacial polarization engineering enables superior energy storage performance in (Pb,La)(Zr,Sn,Ti)O3-based antiferroelectric ceramics,” Ceram. Int., vol. 50, no. 20, pp. 38314–38322, Oct. 2024, doi: 10.1016/j.ceramint.2024.07.195.
M. Morozov, D. Damjanovic, and N. Setter, “The nonlinearity and subswitching hysteresis in hard and soft PZT,” J. Eur. Ceram. Soc., vol. 25, no. 12, pp. 2483–2486, Jan. 2005, doi: 10.1016/j.jeurceramsoc.2005.03.086.
T. Sauerwald, D. Skiera, and D. Kohl, “Field induced polarisation and relaxation of tungsten oxide thick films,” Thin Solid Films, vol. 490, no. 1, pp. 86–93, Oct. 2005, doi: 10.1016/j.tsf.2005.04.009.
C. Silvestre and J. R. Hauser, “Time-dependent dielectric breakdown measurements on RPECVD and thermal oxides,” Thin Solid Films, vol. 277, no. 1–2, pp. 101–114, May 1996, doi: 10.1016/0040-6090(95)08017-1.
R. Richert, “Dielectric responses in disordered systems: From molecules to materials,” J. Non. Cryst. Solids, vol. 351, no. 33–36, pp. 2716–2722, Sep. 2005, doi: 10.1016/j.jnoncrysol.2005.03.065.
R. Meena and R. S. Dhaka, “Temperature dependent conductivity, dielectric relaxation, electrical modulus and impedance spectroscopy of Ni substituted Na3+2xZr2−xNixSi2PO12,” Phys. B Condens. Matter, vol. 690, no. 12, p. 416209, Oct. 2024, doi: 10.1016/j.physb.2024.416209.
Downloads
Published
How to Cite
License
Copyright (c) 2026 Milana Bushina
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
