KALIBEK, R.; SOPYRYAEVA, D. Tailoring oxygen-vacancy concentration in Ga₂O₃ thin films through controlled post-annealing: Experimental correlation between defect chemistry, carrier transport, and dielectric response. Technobius Physics, [S. l.], v. 4, n. 2, p. 0055, 2026. DOI: 10.54355/tbusphys/30070147.4.2.2026.0055. Disponível em: https://technobius.kz/index.php/phys/article/view/375. Acesso em: 7 jul. 2026.